Electron transport in gallium nitride (GaN) and zinc oxide (ZnO) remains a field of intense study due to the promise these wide energy gap semiconductors hold for high-power, high-frequency and ...
The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...
Electrical engineers have cleared another hurdle in high-power semiconductor fabrication by adding the field's hottest material -- beta-gallium oxide -- to their arsenal. Beta-gallium oxide is readily ...
Using hard X-ray photoemission spectroscopy, researchers revealed how oxygen vacancies and structural disorder influence subgap state formation. The figure shows the InGaZnO 4 crystal structure, the ...
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